SUPERCONDUCTING SEMICONDUCTOR NANOSTRUCTURE WITH QUANTUM WELLS Russian patent published in 2004 - IPC

FIELD: physics of semiconductors, semiconductor epitaxial nonostructures with quantum wells, in particular. SUBSTANCE: invention can be utilized in realization of semiconductor devices which operation is based of effect of superconductivity. Proposed superconducting semiconductor nanostructure with quantum wells filled with two-dimensional electron gas comes in the form of layer of narrow-band semiconductor placed between barrier layers of wide-band semiconductor. Quantum well is formed on short-period superlattice with minizone which energy ε₁ satisfies condition ε₁>E₁, where E₁ - is energy of basic level of uniform quantization of quantum well and barrier layer of wide-band material which carries layer δ - of charge carriers with energy δE₁>ε₁ arranged in series. In this case thickness t of barrier layer separating quantum well from short- period superlattice is chosen from relation where - q-1T-F

is length of Thomas-Fermi screening. Quantum well can be formed by layer of i-GaAs with thickness 60-80 contained between barrier layers of i-GaAs showing thickness not less than 40 Short-period superlattice is formed by alternating layers of GaAs/i-AlAs with thickness over 15 and number of periods over 40. Barrier layer is built from i-AlAs and layer δ with concentration of charge carriers 2•10¹⁸ sm^-3 is located at distance 40 from superlattice. EFFECT: enhanced temperature of junction of semiconductor nanostructure with quantum wells to superconducting state. 5 cl, 3 dwg