PROCESS OF CHEMICAL SEPARATION OF SILICON PLATES WITH DEEPLY DEPOSITED P - N JUNCTION INTO INDIVIDUAL CRYSTALS Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: pattern of separating tracks on both sides of silicon plate is formed by process of photolithography. On one side pattern of separating tracks is produced in the form of stripe with width not less than d_max (d_max is width of track) for which speed of etching of silicon in given etching agent is permanent. On opposite side pattern of separating tracks in direction of area of closing of etching fronts is set in the form of chain of circles having diameter d, where d<d_max, removed from each other at distance l determined by inequality specified in description of invention. In this case line of separation of crystals on which holes are arranged has roundnesses in angles of crystals over radius R≥ 2h_av, where h_av is average width of track between crystals on common base. EFFECT: facilitated manufacture, improved quality.