MANUFACTURING PROCESS FOR CHIP WITH SINGLE-SIDED CONTACTS FOR HIGH-POWER LIGHT-EMITTING DIODE Russian patent published in 2000 - IPC

FIELD: microelectronics; semiconductor devices. SUBSTANCE: upon evaporating central-contact metal film chip surface is covered with masking coat such as inorganic film, then photoresist mask is formed by photolithographic method, inorganic film is locally removed by etching through its windows, photoresist is removed from areas where contacts are brought out to chip surface, semiconductor structure of chip is etched to produce mesa base therein, inorganic film not covered by photoresist is removed, metal film is evaporated under vacuum, and then photoresist is removed together with its metal film. Silicon oxide or silicon nitride may be used as inorganic film. Proposed method provides for reducing discrepancy in current-voltage characteristics of chip and for improving its competitive and utility properties. EFFECT: improved yield, reduced labor consumption and cost. 3 cl, 7 dwg, 1 tbl