PROCESS OF MANUFACTURE OF SEMICONDUCTOR DEVICES Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: in process of manufacture of devices based on silicon structures with dielectric insulation of device elements termination pads of metallization are fabricated on section of structures isolated from periphery of crystals with dielectric areas. Before deposition of passivating coating and separation of structure into crystals there is conducted local etching of surface layer of silicon above intercrystal separating tracks and over sections of structure placed far from termination pads at distance not less than 10 μm and not more than diameter of outer leads connected to termination pads and positioned between termination pads and areas of dielectric insulating termination pads from periphery of crystals. Dielectric protrusion formed after etching of silicon prevents touching of external leads formed then to face sections of crystals. EFFECT: increased reliability of device thanks to prevention of formation of contact of external leads with conductive sections of surface of crystals. 2 dwg