MAGNETOTRANSISTOR Russian patent published in 1994 - IPC

FIELD: measurement technology, automatic control systems. SUBSTANCE: invention relates to two-collector planar magnetotransistor formed in epitaxial layer of first type conductance grown on substrate of second type conductance and including two parallel strip base electrodes of first type conductance. Two strip collector regions of second type conductance directed perpendicular to base electrodes are located between electrodes. Emitter region of second type conductance is positioned between collectors. To raise magnetosensitivity latent layer of first type conductance is formed at boundary of separation of epitaxial layer and substrate under emitter and base electrode adjacent to it. In addition to it base electrode adjacent to emitter is connected to latent layer through vertical high-doped layer of first type conductance. EFFECT: raised magnetosensitivity. 2 cl, 2 dwg