PLANAR BIPOLAR MAGNETIC TRANSISTOR Russian patent published in 2012 - IPC H01L29/82 

FIELD: electricity.

SUBSTANCE: planar bipolar magnetic transistor contains silicone single-crystal substrate, diffused tub, base zone in tub, emitter zones, the first and second measurement collectors at base, area of contacts to base, diffused tub and substrate. Emitter and collector zones are located at big distance from each other along vertical part of pn-junction base-tub and at small distance from boundary of space-charge region of pn-junction base-tub. Contacts to tub in regard to base-tub junction are located opposite collectors; contacts to base are located between emitter and collectors and limit current flow of inject carriers directly between emitter and collectors. An each side of strip emitter there are two collectors, right and left collector from collector side are connected by metal deposition and have two common collector contacts. Difference of collector current values in magnetic field corresponds to measured magnetic induction component vector perpendicular to crystal surface.

EFFECT: enhancement in sensitivity of magnetic field perpendicular to crystal surface.

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