MAGNETIC TRANSISTOR WITH COLLECTOR CURRENT COMPENSATION Russian patent published in 2016 - IPC H01L29/82 

FIELD: electronics.

SUBSTANCE: invention relates to semiconductor electronics. Magnetic transistor with collector current compensation comprises silicone single-crystal substrate, diffusion pocket, base area in pocket, emitter areas, first and second measurement collectors at base, contact areas to base, diffusion pocket and substrate. Magnetic transistor is characterised by geometry of areas of heavily doped contacts to base and offset voltage on said contacts, wherein part of areas of collectors transmits sink current from the emitter, and other part of drain current towards contact to base. Said currents compensate collector current in initial state, which increases ratio of collector current in magnetic field to collector current without magnetic field and thus higher sensitivity of collector current.

EFFECT: magnetic transistor with compensation of collector current in integrated magnetic sensors increases sensitivity to magnetic field perpendicular to surface of chip.

1 cl, 6 dwg