THREE-COLLECTOR BIPOLAR MAGNETOTRANSISTOR WITH ORTHOGONAL FLOWS OF CHARGE CARRIERS Russian patent published in 2015 - IPC H01L29/82 

FIELD: electricity.

SUBSTANCE: three-collector bipolar magnetotransistor with orthogonal flows of charge carriers contains a silicon single-crystal substrate, base area on the substrate surface with small concentration of impurities, heavily doped emitter areas, the first and the second measuring collectors with the depth less than the depth of the base area and located in base area, the area of heavily doped contacts to the base, the diffusive pocket which separates the base area from the substrate and is the third collector, heavily doped contacts to the pocket and to the substrate. Contacts to the pocket are connected by metallization to contacts to the base, contacts to the substrate are connected by metallization to contacts to the emitter, areas of the emitter and collectors are located near the base at a distance from each other, contacts to the pocket are located in the pocket near p-n junction boundary base-pocket opposite to measuring collectors, the emitter has identical length with the measuring collectors, heavily doped contacts to the base are located end-to-end with end faces of the strip emitter with the orthogonal direction between the emitter and contact to the base with reference to the direction between the emitter and measuring collectors.

EFFECT: enhancement in sensitivity of magnetic field parallel to crystal surface.

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