ORTHOGONAL MAGNETOTRANSISTOR CONVERTER Russian patent published in 2014 - IPC H01L27/22 

FIELD: physics.

SUBSTANCE: orthogonal magnetotransistor converter has a monocrystalline silicon substrate, a diffusion pocket, a base region in the pocket, an emitter region, first and second measuring collectors in the base, contact regions of the base, the diffusion pocket and the substrate. The base and pocket current is supplied through a field-effect transistor with a gate in form of a p-n junction, and two other field-effect transistors with a gate in form of a p-n junction serve as collector loads. Magnetic field which is perpendicular to the substrate is converted by a stripline transformer into a magnetic field which is parallel to the substrate. Part of the stripline transformer is situated over the active part of the magnetotransistor. The field-effect transistors with a gate in form of a p-n junction are given with channel width ratio greater than 2:1 in the base and pocket current setting field-effect transistor and the in the field-effect transistors of the collector load. The field-effect transistors of the collector load are connected in a current mirror circuit. The orthogonal magnetotransistor converter according to the invention as part of integrated magnetic sensors increases sensitivity to a magnetic field directed perpendicular to the surface of the chip.

EFFECT: high sensitivity to magnetic field.

2 cl, 5 dwg