MICROELECTRON VACUUM DEVICE Russian patent published in 1994 - IPC

FIELD: electron devices. SUBSTANCE: microelectron device has anode, cathode and perforated controlling electrode placed into body. Novelty lies in that cold cathode is made in film structure of wide-zone n-p homogeneous junction-isotype p-p⁺ heterogeneous junction on which there are placed in sequence: controlling electrode of type lattice layer of dielectric-lattice layer of metal, lattice layer of dielectric with layer of metal over contour on which laminated anode is anchored. Ohmic contact of isotype p-p⁺ heterogeneous junction is manufactured as lattice metal-dielectric structure, p⁺ region is equal to width of isotype junction. Relation of thicknesses of lattice layers of metal and dielectric of controlling electrode amounts to (5: 1): (10: 1) and relationship of length of opening of lattice to length of octave lies within interval from 10 to 10³. EFFECT: reduced dimensions and consumed power. 1 dwg