FIELD: manufacture of microelectronic devices. SUBSTANCE: integral technology methods are used to shape semiconductor cathode by homoepitaxy from gas phase in the form of p-n structure and by heteroepitaxy from gas phase in the form of p - p+ film structure; then dielectric layers are formed by ion-plasma spraying at 250-350 C and metal layers for film electrodes at 150-200 C; layer build-up speed is maintained between 10 and 100 
. EFFECT: reduced power requirement and device transconductance. 1 dwg
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