MEMORY GATE Russian patent published in 1997 - IPC

FIELD: computer engineering. SUBSTANCE: device has semiconductor substrate which is designed as single- crystal or polycrystal film layer, joined bipolar transistors with metal wiring. Said transistors are separated by insulation layers. In addition device has terminals for writing, reading, clearing and terminals of power supply unit. Pairs of bipolar structures are located on ends of semiconductor substrate; while insulation layer and layer of ferromagnetic material are located along semiconductor substrate. Layer of ferromagnetic material has two flat pole pieces. Bipolar transistors in pairs are connected in series, emitters of lower bipolar transistors in pairs are connected to power supply, bases of upper transistors in each pair are connected to bases of lower transistors of adjacent pairs. EFFECT: increased functional capabilities. 2 dwg