HIGH-POWER BIPOLAR TRANSISTOR Russian patent published in 1994 - IPC

FIELD: semiconductor engineering. SUBSTANCE: high-power comb-structure bipolar transistor has n-type collector region, p-type base region, and n-type emitter region with emitter comb width a. Novelty in transistor design is that distance between emitter combs is variable and increasing sequentially from value on periphery of comb structure to that in its center and is selected depending on width of emitter combs using equation given in description of invention. EFFECT: improved design. 4 cl, 1 dwg