FIELD: semiconductor electronics.
SUBSTANCE: high-power HF and microwave transistor structure includes areas of collector, emitter and base, contact metallization and ballast resistor, divided into sections connected by one edge to contact metallization of emitter, and other edge with contact pad for emitter output connection. Ballast resistor is multilayer, layers materials have different resistivity and melting point, increasing from upper layer to lower one relative to semiconductor substrate.
EFFECT: technical result of invention is higher fault tolerance of transistor structure due to increase of its resistance to increase in temperature of sections of active structure area due to deviation of characteristics of amplification mode from standard values, for example, in mismatch of power amplifier end cascade with load; when temperature reaches critical value, invention provides reduction of power by sections of active region of transistor structure due to abrupt increase in resistance of most heated sections of ballast resistor due to evaporation of their upper layers and input resistance of structure as a whole.
1 cl, 2 dwg
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