POWERFUL BIPOLAR TRANSISTOR Russian patent published in 1999 - IPC

Abstract RU 2127469 C1

FIELD: microelectronics. SUBSTANCE: transistor has collector region of first conductance type, base region of first conductance type, emitter region, which is designed as comb structure of first conductance type. Base region also contains strip region which has same width and conductance as emitter and which is located in parallel to emitter projection and is adjacent to emitter region at end of projection. EFFECT: increased operating currents, increased stability to secondary breakdown. 2 dwg

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RU 2 127 469 C1

Authors

Gordeev A.I.

Korolev A.F.

Obmajkin Ju.D.

Dates

1999-03-10—Published

1996-10-14—Filed