POWERFUL BIPOLAR TRANSISTOR Russian patent published in 1996 - IPC

Abstract RU 2056674 C1

FIELD: microelectronics. SUBSTANCE: device has collector area, base area, ridge-shaped emitter area, which is embraced along all perimeter by strip-shaped area having constant width. Conductivity of said area is same as that of emitter area. Distance between emitter are and strip area decreases in direction from beginning to end of emitter ridge. Base electrode is located on surface of base area outside of emitter and strip and it embraces said areas. EFFECT: increased functional capabilities. 2 dwg

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RU 2 056 674 C1

Authors

Korolev A.F.

Obmajkin Ju.D.

Levin A.A.

Gordeev A.I.

Nasejkin V.O.

Dates

1996-03-20—Published

1993-01-18—Filed