FIELD: semiconductor electronics.
SUBSTANCE: powerful RF and microwave transistor structure contains collector, emitter and base regions, contact metallization and a multilayer ballast resistor divided into sections connected by one edge to the emitter contact metallization, and by the other edge to a contact pad for connecting the emitter output. The number of layers of each section of the multilayer ballast resistor is n≥2, the layer materials have different specific resistivities and melting temperatures, increasing from the upper layer to the lower one in relation to the semiconductor substrate, the thicknesses of the upper layers of sections of the multilayer ballast resistor increase in the direction from the emitter metallization to the opposite edge of the resistor.
EFFECT: invention provides prevention of overheating of the transistor structure in transient modes due to redistribution of thermal power released by the active region sections heated to the critical temperature and increased fault tolerance of the transistor structure in transient modes.
1 cl, 2 dwg, 1 ex
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