INTEGRATED-CIRCUIT TRANSISTOR WITH SURGE-VOLTAGE PROTECTIVE GEAR Russian patent published in 2001 - IPC

FIELD: semiconductor devices such as high- power and high-voltage transistors. SUBSTANCE: transistor has collector region of first polarity of conductivity, base region of second polarity of conductivity, emitter region of first polarity of conductivity, and field-effect transistor. Drain of field-effect transistor is connected to base region and its source functions as base contact. Field-effect transistor is mounted in base region of second polarity of conductivity; drain region of field-effect transistor is integrated with base region; gate is connected to collector region either through resistor or through back- biased voltage regulator diode made in the form of separate component or separate chip region. Base region adjacent to gate on base contact side and located between gate and emitter region may be etched. EFFECT: enhanced reliability of surge-voltage protection. 1 dwg