SEMICONDUCTOR PRESSURE TRANSFORMER Russian patent published in 2006 - IPC G01L9/04 

FIELD: measuring equipment engineering, in particular, engineering of small pressures transformers.

SUBSTANCE: semiconductor pressure transformer has silicon membrane with thickened peripheral base, made of n-type conductivity silicon and alloyed with boron up to concentration not less than 5*10¹⁹ cm^-3. Membrane has thickness equal to height of tension resistors formed at layer of silicon dioxide held on membrane and made of silicon, alloyed with boron up to similar concentration level as membrane itself. Tension resistors are connected by means of commutation buses with metallized contact areas to form a bridge measuring circuit. Membrane has profile with concentrators of mechanical strains in place of tension resistors position, which is a combination of thinned portions and rigid centers, and surface of tension resistors is covered by silicon dioxide layer.

EFFECT: increased sensitivity of transformer while maintaining native resonance frequency, improved durability and hardness of membrane, improved linear transformation range, improved stability of characteristics.

2 dwg