METHOD OF PHOTOLITHOGRAPHY Russian patent published in 2016 - IPC H01L21/27 

FIELD: electronic equipment.

SUBSTANCE: invention relates to electronic engineering, particularly to processes of topological elements microelectronic devices forming using electrochemical deposition and lift-off lithography. Method of photolithography involves formation of first positive photoresist layer by, at least, two cycles of application on substrate of photoresist layer with subsequent drying, exposing first layer without template, formation of second positive photoresist layer by, at least, two cycles of application on substrate of photoresist layer with subsequent drying, thermal treatment at temperature of 120-150 °C, exposure through template and development, wherein exposure time of first layer is less than exposure time of second layer.

EFFECT: technical result obtained at implementation of proposed invention, consists in implementation of expansion of arsenal of technical facilities to generate technologically qualitative mask by negative angle of inclination of walls of profile of positive photoresist with thickness of 7-15 mqm, that is accompanied by reduction of formation of defects, achieving optimum parameters of edge of negative profile, which is necessary for qualitative reverse photolithography and increases yield structures after photolithography.

8 cl, 1 dwg