FIELD: microelectronics. SUBSTANCE: dynamic memory location has fourth and fifth insulating layers, second conducting layer of high-melting material; hole is made in fifth insulating layer and contact layer of high-melting material oxide is located in hole of fifth insulating layer so that it abuts semiconductor layer and second conducting layer. Such design makes it possible to reduce location area by 40% at the same time improving its reliability due to raising radiation stability and decreasing leakage current five times. EFFECT: improved integration degree and reliability of memory location. 2 dwg
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