FIELD: electrical technology. SUBSTANCE: connective interlayers are applied on the surfaces of each semi-conductor material. Then semi-conductor materials are brought into contact with themselves and with metal which is applied by glass and are displaced on plate electrode. The process is followed by heating to temperature not more 700 C and by applying voltage till corona discharge is struck. Then sustaining within at least 20 min takes place. Connective interlayer has glass containing oxides of alkali or rare-earth metal, boron, phosphorous or gold, aluminium, zinc and tin layer. EFFECT: improves hermetic nature of connection at normal temperatures, decreases mechanical stress of connection, simplifies technology.
