METHOD OF CREATING PHOTOSENSITIVE SURFACE-BARRIER STRUCTURE Russian patent published in 2024 - IPC H01L31/18 

FIELD: electricity.

SUBSTANCE: method of creating a photosensitive surface-barrier structure, characterized by the fact that a semi-transparent conducting electrode is deposited on a silicon substrate with a tunnel-thin dielectric. Between tunnel-thin dielectric and transparent for radiation conducting electrode by method of physical evaporation in vacuum chamber with preliminary pumping to pressure of 10^-6 Pa simultaneously of silicon dioxide and germanium dioxide germanosilicate glass is deposited ([GeO]_x[SiO₂]_1-x), with x from 0.25 to 0.75 with thickness from 25 to 100 nm, at substrate temperature of 20 to 200 °C. Further, a conductive electrode which is transparent for radiation is applied.

EFFECT: obtaining photocurrent in a wide spectral range.

3 cl, 2 ex