PROCESS OF MANUFACTURE OF LAYERS OF SILICON OXIDE Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: stoichiometric layers of silicon oxide are produced by plasmachemical oxidation of hexamethyldisilasan with nitrogen monoxide injected into reactor behind zone of discharge inductor under partial pressures of (0,5-2,0)·10^-2 and (3,0-5,0)·10^-2 accordingly with substrate temperature 200-300 C in atmosphere of helium which is injected into reactor through zone of HF discharge under partial pressure (1,5-3,0)·10^-2 and with power of HF discharge 80-100 W. EFFECT: improved efficiency of process. 1 dwg, 1 tbl