METHOD FOR PRODUCING BORON NITRIDE LAYERS ON SEMICONDUCTOR SUBSTRATES Russian patent published in 1994 - IPC

Abstract RU 2012092 C1

FIELD: manufacture of semiconductor structures. SUBSTANCE: boron nitride layers are produced as result of reaction of borazole and helium under HF discharge conditions. EFFECT: facilitated procedure. 1 tbl

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RU 2 012 092 C1

Authors

Smirnova T.P.

Jashkin I.L.

Khramova L.V.

Baklanov P.Ju.

Sysoeva N.P.

Amosov Ju.I.

Dates

1994-04-30Published

1992-03-04Filed