METHOD FOR PRODUCING ACTIVE STRUCTURE OF NON-VOLATILE RESISTIVE MEMORY ELEMENT Russian patent published in 2021 - IPC G11C13/00 H01L27/24 H01L21/8239 

FIELD: storage devices.

SUBSTANCE: invention relates to the technology of information accumulation, to computer technology, in particular to the elements of resistive memory, to the memory elements of electrically reprogrammable permanent storage devices that store information when the power is turned off, and can be used in the creation of memory devices, such as computers, microprocessors, electronic passports, and electronic cards. The method for obtaining the active structure of a non-volatile resistive memory element includes the production of a layer on a substrate that provides the formation of nanojunctions for the implementation of the filamentous conduction mechanism, and an active layer that provides the filamentous conduction mechanism, adjacent to each other. The layer that provides the formation of nanojunctions for the implementation of the filamentous conduction mechanism is made with the formation of a system of layers consisting of a tunnel-thin layer of a solid dielectric and a dielectric layer with embedded semiconductor nanoclusters with a thickness equal to the diameter of the nanoclusters. A layer of hydrogenated amorphous silicon a-Si:H is precipitated on the substrate. Then, acidification is carried out in the oxygen-containing plasma from the side of its surface, which is accessible to the plasma, leading to the production of a dielectric - non-stoichiometric silicon oxide. Partial acidification is carried out, due to the island growth mechanism, which provides the formation of a system of layers consisting of a tunnel-thin layer of continuous non-stoichiometric silicon oxide and an adjacent layer in the form of a continuous percolation cluster of non-stoichiometric silicon oxide with nanoclusters of an amorphous semiconductor - hydrogenated amorphous silicon a-Si:H with a thickness equal to the diameter of these nanoclusters. After that, the acidification is stopped, which completes the production of the layer that provides the formation of nanojunctions for the implementation of the filamentous conduction mechanism. Alternatively, the production is completed by subsequent heat treatment of the system of these layers, leading to the release of hydrogen, the transformation of non-stoichiometric silicon oxide into stoichiometric silicon oxide with the diffusion of an excess of silicon semiconductor atoms to embedded nanoclusters, the transformation of hydrogenated amorphous silicon a-Si:H of nanoclusters into amorphous silicon.

EFFECT: invention provides a reduction in the value of the forming voltage up to reaching zero; prevention of possible failure of the memory element; increasing the stability and repeatability of the characteristics; reducing the switching voltage.

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