METHOD OF PREPARING VOLUME SILICON MONOCRYSTALS OF P-TYPE Russian patent published in 1996 - IPC

Abstract RU 2070233 C1

FIELD: production of silicon for stabilitrons and epitaxy substrates. SUBSTANCE: into silicon melt containing boron substitution admixture in concentration 3.6 • 10^-4 - 8.1 • 10^-2 wt %, aluminium is introduced as a second admixture to concentration 3 • 10^-1 - 3 • 10^-2 wt % in respect to silicon. EFFECT: improved quality of crystal. 2 tbl

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RU 2 070 233 C1

Authors

Gubenko Anatolij Jakovlevich

Dates

1996-12-10—Published

1992-02-04—Filed