METHOD FOR PR0DUCTION OF ALLOYED MONOCRYSTALS OR POLYCRYSTALS OF SILICON Russian patent published in 2005 - IPC

FIELD: production of solar batteries, integrated circuits and other semiconducting devices.

SUBSTANCE: the invention presents a method of production of alloyed monocrystals or polycrystals of silicon and may be used in production of solar batteries, integrated circuits and other semiconductor devices. The substance of the invention: the method of SUBSTANCE: the invention presents a method of production of alloyed monocrystals or polycrystals of silicon includes preparation of the initial charge consisting of 50 % of silicon alloyed with phosphorus with a specific electrical resistance of 0.8-3.0 Ohm·cm or boron with specific electrical resistance of 1-7 Ohm·cm, its melting-down and consequent growing of crystals from the melt, in which additionally enter elements of IV group from the periodic table by Mendeleyev, in the capacity of which use germanium, titanium, zirconium or hafnium use in concentrations of 10¹⁷-7·10¹⁹ cm^-3. The invention allows to produce chips with high values of life time of minority carrier (LTMC), high homogeneity of electric resistivity (ER) and high concentration of oxygen, with a low concentration of defects and increased thermostability and radiation resistance.

EFFECT: the invention ensures production of chips with high values of LTMC, high homogeneity of ER and high concentration of oxygen, with a low concentration of defects and increased thermostability and radiation resistance.

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