METHOD FOR CHECKING SEMICONDUCTOR INTEGRATED CIRCUITS Russian patent published in 1994 - IPC

Abstract RU 2018148 C1

FIELD: measurement of electrical quantities. SUBSTANCE: equipment under check is subjected to cyclic effect of test signals and also to high and low temperatures; informative parameter is assumed to be hysteresis loop of obtained curve showing critical voltages as function of heating and cooling. EFFECT: facilitated procedure. 1 dwg

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RU 2 018 148 C1

Authors

Pokrovskij F.N.

Gavrilov V.Ju.

Nomokonova N.N.

Dates

1994-08-15Published

1990-08-13Filed