PROCESS OF INSPECTION OF INTEGRATED CIRCUITS FOR DEFECTS Russian patent published in 1999 - IPC

FIELD: manufacture and usage of integrated circuits. SUBSTANCE: test object is subjected to thermal cycling and dependence of change of informative parameter ( critical supply voltage ) on value of external action ( temperature ) is recorded. Test objects are inspected for defects on basis of comparison of dependencies during various thermal cycles. Curve of standard temperature dependence of critical supply voltage is calculated by experimental data per each type of test objects and value of discrepancy of temperature dependencies of tested and standard integrated circuits is used to determine criteria for inspection of integrated circuits. Areas beneath curves of temperature dependencies of critical supply voltage are used for calculations and versatile program for calculation of area of hysteresis loop developed specially is employed. Process can be used for classification of integrated circuits by such criteria as potential reliability and quality of integrated circuits as well as for increase of authenticity of other inspection methods both in process of manufacture and at incoming control in factories producing integrated circuits. EFFECT: increased reliability of process. 2 dwg