FIELD: manufacturing semiconductor devices. SUBSTANCE: method involves the steps of: applying organo-circonium composition onto a substrate, exposing to ultraviolet radiation at a temperature of 100-200 degrees C for 15-60 min, subjecting to heat treatment by exposing to non-coherent light of intensity sufficient to cause the heating of the substrate at a rate of 60-150 degrees C/sec up to 500-900 degrees C. EFFECT: enhanced efficiency. 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| PROCESS OF FORMATION OF BUFFER LAYERS OF ZIRCONIUM DIOXIDE | 1991 |
|
RU2035084C1 |
| PROCESS OF MANUFACTURE OF THIN SUPERCONDUCTIVE FILMS | 1990 |
|
RU2054212C1 |
| METHOD OF PRODUCING THIN FILM CONFIGURATION OF HIGH-TEMPERATURE SUPERCONDUCTORS | 1991 |
|
RU2045114C1 |
| BIS(N,N- DIETHYL CARBAMATE) OF TIN, METHOD FOR ITS PREPARATION AND MANUFACTURE OF ALLOYED TIN OXIDE FILMS BASED ON IT | 2020 |
|
RU2761322C1 |
| BIS(N,N-DIETHYL TIN CARBAMATE), METHOD FOR SYNTHESIS THEREOFAND PRODUCTION OF TIN OXIDE FILMS BASED THEREON | 2020 |
|
RU2762687C1 |
| METHOD OF PRODUCING PHOTOCATALYTIC COMPOSITES OF SPHERICAL LAYERED STRUCTURE FOR CLEANING WATER BODIES AND PHOTOCATALYTIC COMPOSITES TiO-Ag-SiO OBTAINED BY METHOD | 2023 |
|
RU2829728C1 |
| METHOD OF OBTAINING MESOPOROUS NANOSTRUCTURED METAL-OXIDE FILM BY ELECTROSTATIC SPRAYING METHOD | 2016 |
|
RU2646415C1 |
| PROCESS OF MANUFACTURE OF POWERFUL SHF TRANSISTOR STRUCTURES WITH STABILIZING EMITTER RESISTORS | 1991 |
|
RU2024994C1 |
| METHOD FOR FORMING CARBON FILMS BY PLASMA DEPOSITION OF CARBON ATOMS IN METHANE | 2022 |
|
RU2794042C1 |
| INORGANIC SPHERIC GRANULATED HYDRATED ION-EXCHANGE MATERIAL AND METHOD FOR ITS PRODUCTION | 1992 |
|
RU2034645C1 |
