METHOD FOR FORMING CARBON FILMS BY PLASMA DEPOSITION OF CARBON ATOMS IN METHANE Russian patent published in 2023 - IPC B82B3/00 

FIELD: nanotechnology; physics of condensed matter.

SUBSTANCE: invention can be used in synthesis of thin carbon films used in a wide range of electronic devices. The method for forming carbon films, including deposition of carbon atoms on a solid substrate, is characterized in that the deposition of carbon is carried out with methane plasma, which is preliminarily formed in a plasma chamber with an inductively coupled source at an excitation frequency of 13.56 MHz, plasma power of not more than 200 W, and duration of deposition no more than 10 min. Crystallization of the obtained amorphous hydrogenated carbon films is carried out by means of microwave radiation at a wave power of 700 W and a heat treatment duration of 5-7 minutes.

EFFECT: obtaining carbon films by plasma deposition of carbon atoms on a substrate in methane at a low temperature, ensuring the integrity and structure of the deposited surface.

2 cl, 5 dwg