PROCESS OF FORMATION OF PHOTOLITHOGRAPHIC PATTERN IN SILICON DIOXIDE FILM ON RELIEF SURFACE OF SILICON WAFER Russian patent published in 1998 - IPC

FIELD: manufacture of semiconductor devices, for instance, transducers of mechanical parameters. SUBSTANCE: in process of formation of photolithographic pattern in silicon dioxide film on relief surface of silicon wafer positive photoresist is deposited, it is exposed through mask, is developed and thermally processed. Prior to deposition of photoresist on to wafer copper film up to 2.0 mkm thick is sputtered. After deposition photoresist is exposed through mask with negative image of formed pattern windows. Thickness of copper film is increased 3-10 times by electrochemical growth after development and thermal processing of photoresist. on sections uncovered by photoresist. Photoresist is removed, copper layer is etched away over entire surface of plate to depth equal to thickness of initial sputtering with opening of silicon dioxide film in windows, silicon dioxide film is etched away and metal is removed then. EFFECT: enhanced efficiency of process. 7 dwg