FIELD: electronics. SUBSTANCE: photoresist is applied to metal substrate. Then two- side photolithography with formation of negative pattern of circuit conductors and electrochemical precipitation into windows of photoresist mask of metal selectively etched with reference to substrate material are conducted. Dielectric base is pressed on one side of substrate and etching of it is carried out till breaks are formed in regions of crossings of circuit conductors. Additional conductor elements of rectangular shape equidistantly placed from circuit conductors and from each other are formed during formation of photoresist mask simultaneously with pattern of circuit conductors on substrate side. Smaller side of additional element is equal to doubled thickness of substrate. Etching process is stopped after etching away of formed additional conductors. EFFECT: enhanced productivity and quality of hybrid integrated circuits. 4 cl
