FIELD: physics.
SUBSTANCE: dies are made on special circular plates having linear dimensions matching linear dimensions of silicon wafers used in making integrated circuits with topological dimensions similar to those of the die being made. The required topology is transferred onto such plates using a projection mask, which is made using a precision electron-beam or ion-beam image generator, with dimensions of pattern elements magnified N times compared to the pattern on the die, and a projection lithography apparatus which reduces dimensions of the transferred pattern N times and is meant for transferring the topology of the given level to the silicon wafers.
EFFECT: reduced roughness of the edge of the reproduced submicrometer or nano-sized pattern on the die and low cost of making a die for nanoimprint lithography.
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