FIELD: radioelectronic industry. SUBSTANCE: breakdown voltage of a p-n--junction of working structure is measured at the effect of ion beam and at one and the other polarities of ions. The maximum and minimum values of breakdown voltage are recorded, and the value of variable surface charge is calculated from the given formula. EFFECT: improved results of checking.
| Title | Year | Author | Number |
|---|---|---|---|
| SEMICONDUCTOR DEVICE PERIPHERY, NEUTRALISING EFFECT OF CHARGE ON STABILITY OF RETURN LEAKAGE AND BREAKDOWN VOLTAGE | 2008 |
|
RU2379786C1 |
| SEMICONDUCTOR DEVICE | 1995 |
|
RU2117360C1 |
| PROCESS OF MANUFACTURE OF PLANAR P - N JUNCTIONS ON INAS CRYSTALS OF N-TYPE CONDUCTIVITY | 1993 |
|
RU2045107C1 |
| STRUCTURE OF CRYSTAL OF HIGH-VOLTAGE SEMICONDUCTOR DEVICE, HIGH-VOLTAGE INTEGRATED MICROCIRCUIT (VARIANTS) | 2016 |
|
RU2650814C1 |
| VARICAP | 1995 |
|
RU2119698C1 |
| METHOD OF MAKING SELF-ALIGNED HIGH-VOLTAGE INTEGRATED TRANSISTOR | 2012 |
|
RU2492546C1 |
| METHOD OF MANUFACTURING HF QUICK-ACTING TRANSISTOR STRUCTURES | 0 |
|
SU1145838A1 |
| TRANSISTOR STRUCTURES | 0 |
|
SU1272927A1 |
| SEMICONDUCTOR STRUCTURE | 1990 |
|
RU1699313C |
| OPTICAL MODULATOR OF COMPLEX WAVE SIGNALS | 2006 |
|
RU2324961C1 |
