STRUCTURE OF CRYSTAL OF HIGH-VOLTAGE SEMICONDUCTOR DEVICE, HIGH-VOLTAGE INTEGRATED MICROCIRCUIT (VARIANTS) Russian patent published in 2018 - IPC H01L27/06 

FIELD: electrical engineering.

SUBSTANCE: application is semiconductor technology, power electronics, high-voltage semiconductor devices and microcircuits. Semiconductor crystal is known containing a p-type substrate with an n-type epitaxial layer located on it, in which two strongly alloyed spaced from each other areas of the semiconductor, the first of the p-type and the second of the n-type, are located on the side of the surface. First area covers the second area. Between the areas below the surface of the crystal and/or above it there are elements of protection against the surface breakdown. Between the epitaxial layer and the substrate there is a hidden n-type layer. To achieve the technical result at least two sections of different doses of alloying are formed in the hidden layer, of which the first section is located under the entire heavily alloyed area of the n-type semiconductor and is alloyed with the impurity dose of 0.2…0.25 mcC/cm², the second section of the hidden layer is disposed around the first section adjacent to it and is alloyed with a decreasing dose of impurity as the distance from the particular location of the second section to the first section increases.

EFFECT: increased voltage of the breakdown of a crystal of a high-voltage device or a microcircuit due to the reduced influence of the edge fields in the structure of the crystal.

7 cl, 5 dwg