FIELD: physics; semiconductors.
SUBSTANCE: invention relates to power semiconductor devices, specifically to high-voltage semiconductor devices. The semiconductor device periphery has a peripheral annular P-N junction, coated with a dielectric film and surrounded under the dielectric film by a spiral electroconductive film with Zener diodes, with the ends of the spiral connected to P- and N- regions of the junction on the surface of the semiconductor device. The spiral of the electroconductive film with Zener diodes has distance between turns selected based on a given condition.
EFFECT: neutralisation of effect of charge on stability of return leakage and breakdown voltage.
6 cl, 1 dwg
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