FIELD: microelectronics. SUBSTANCE: process of cleansing of surfaces of semiconductor plates is conducted continuously. It involves cleansing of semiconductor plates in flow vessel with cleansing solution based of sulfuric acid, cleansing of solution and its activation in electrochemical cell 25-50% solution of sulfuric acid is used as cleansing solution. The whole amount of it, needed for performance of continuous cycle is fed successively through cathode and anode chambers of electrochemical cell, subjecting it to activation under density of anode current 3.0-4.8 kA/sq.m and voltage across electrodes 3.0-5.0 V. Activated cleansing solution is fed into bath for treatment of semiconductor plates. The whole amount of used solution is directed for repeat activation and cleansing into electrochemical cell. EFFECT: improved cleansing efficiency. 1 dwg, 6 tbl
