INTEGRATED TRANSISTOR RESISTANT TO BACK SECONDARY PUNCTURE Russian patent published in 1994 - IPC

Abstract RU 2024995 C1

FIELD: semiconductor devices. SUBSTANCE: transistor has auxiliary protective transistor structure with base and emitter regions of same type of conductivity as basic transistor in substrate-collector. Emitter region of protective transistor is actively connected with electrode to base region of basic transistor. Base region of protective transistor is built floating. It is located around base region of basic transistor and serves as dividing ring for it. EFFECT: enhanced operational efficiency and reliability. 1 dwg

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RU 2 024 995 C1

Authors

Nasejkin V.O.

Korolev A.F.

Gordeev A.I.

Sandina N.M.

Dates

1994-12-15—Published

1991-07-22—Filed