HIGH-VOLTAGE SELF-ALIGNED INTEGRATED TRANSISTOR Russian patent published in 2013 - IPC H01L29/72 

FIELD: electricity.

SUBSTANCE: high-voltage self-aligned integrated transistor has a collector region consisting of a heavily doped region of a first type of conductivity lying over a dielectric formed in a substrate and a weakly doped region of the same type of conductivity lying over the heavily doped region; a base region lies in the weakly doped region; these regions are surrounded by a slit-type composite insulating region which includes separating dielectrics on vertical walls of the slit, filled with an insulating layer aligned with the dielectric lying under the collector region; in a single cycle with the slit-type composite insulating region, a slit collector contact is formed in the active region of the transistor structure, said contact being adjacent to the insulating region which includes separating dielectrics on vertical walls of the slit, filled with a conducting layer which is in contact in the bottom part of the insulated contact with the collector region; slit contacts to the base and emitter regions are made in a single cycle, said contacts including separating dielectrics on vertical walls of the slit, filled with a conducting layer, in contact in the bottom part of the insulated contact with the base and emitter regions, respectively. The base contact adjoins the insulating region and the emitter contact adjoins the collector contact.

EFFECT: improved method.

2 cl, 1 dwg