HIGH-VOLTAGE SELF-ALIGNED INTEGRATED DIODE Russian patent published in 2013 - IPC H01L29/861 

FIELD: electricity.

SUBSTANCE: integrated diode has a region which consists of heavily doped region of a first conductivity type lying over a dielectric formed in a substrate and a weakly doped region of the same type of conductivity lying over the heavily doped region; said regions are surrounded by a slit-type composite insulating region which includes separating dielectrics on vertical walls of the slit, filled with an insulating layer aligned with the dielectric lying in the substrate; in a single cycle with the slit-type composite insulating region, a slit contact to the region of the first conductivity type and to the region of the second conductivity type is formed, adjacent to the insulating region, including separating dielectrics on vertical walls of the slit, filled with a conducting layer; the first is in contact in the bottom part of the insulated contact with the region of the first conductivity type, and the second is in contact in the bottom part of the insulated contact with the region of the second conductivity type, respectively. Slit contacts to regions of the diode are made from doped polysilicon, aluminium and nickel polycide.

EFFECT: high density of assembling structures, faster operation thereof and high output of non-defective products.

2 cl, 1 dwg