TRANSISTOR WITH OVERVOLTAGE PROTECTION Russian patent published in 1995 - IPC

Abstract RU 2037237 C1

FIELD: radio engineering. SUBSTANCE: transistor includes auxiliary protective transistor structure with base and emitter regions of same type of conductance as main transistor located in substrate-collector. Emitter region of protective transistor is ohmically coupled with electrode to base region of main transistor and base region of protective transistor is made floating. Base region of main transistor is located around base region of protective transistor at distance smaller than width of region of space change at puncture voltage in collector-emitter region of protective transistor. EFFECT: enhanced stability of operational characteristics. 1 dwg

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RU 2 037 237 C1

Authors

Korolev A.F.

Gordeev A.I.

Obmajkin Ju.D.

Nasejkin V.O.

Dates

1995-06-09—Published

1991-07-02—Filed