FIELD: microelectronics. SUBSTANCE: process of manufacture of multilayer silicon structures involves formation of layer of refractory metal on surface of at least one of two silicon plates and formation of layer of semiconductor material on surface of the other plate, positioning of one plate on to the other one with applied layers arranged in opposition, performance of thermal treatment and thinning of formed structure. Germanium 0.03-0.20 μm thick is used as semiconductor material. Thickness of layer of refractory metal is not less than 0.05 μm. EFFECT: enhanced output of good structures thanks to improved continuity of connecting layer and to reduced mechanical stresses.
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