COMPLEMENTARY BIPOLAR TRANSISTOR STRUCTURE OF INTEGRATED CIRCUIT Russian patent published in 1998 - IPC

FIELD: microelectronics. SUBSTANCE: complementary bipolar transistor structure of integrated circuit includes n-p-n and p-n-p transistors made in multilayer semiconductor structure and insulated by dielectric regions. Conductors to regions of emitter, base and collector of each transistor are connected to proper regions and are insulated by layers of dielectric. Region of collector of p-n-p transistor is separated from substrate of p-type conductance by region of n-type conductance. Conductors to regions of emitter of n-p-n transistor and base of p-n-p transistor are formed from polycrystalline silicon of first level doped with donor impurity, conductors to regions of base of n-p-n transistor and emitter of p-n-p transistor are formed from layer of polycrystalline silicon of second level doped with acceptor impurity. Regions of emitters of specified transistors are formed by diffusion from doped polysilicon conductors to these regions. Conductors to regions of collectors of transistors are made from metal and are connected to corresponding regions on bottom of recesses formed in structures. Distances between conductors to regions of transistors are determined by thickness of dielectric layers insulating conductors. EFFECT: enhanced density of packaging and speed of response of integrated circuits. 2 cl, 2 dwg