FIELD: electricity.
SUBSTANCE: invention may be used for production of cooled single element, line and matrix radiation receivers with photosensitive elements - planar photodiodes on indium antimonide (InSb). In planar photodiode on indium antimonide, containing substrate of n-type of conductivity with concentration of alloy atoms of impurity not exceeding 3·1015 cm-3 with formed in it planar p-n junction, protective film of anode oxide, passivating dielectric film and contact system, substrate surface has crystallographic orientation (111)A.
EFFECT: increasing breakdown voltage of planar photodiode due to the least stibium atomic population on the surface with crystallographic orientation.
1 dwg
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