METHOD FOR MANUFACTURING P-N-JUNCTIONS ON CRYSTALS OF INDIUM ANTIMONIDE HAVING N-TYPE CONDUCTANCE Russian patent published in 1996 - IPC

FIELD: methods for production of diodes and transistors, including photo diodes and photo transistors. SUBSTANCE: method involves implantation beryllium ions, firing after implantation, protection and inhibition of crystal surface, and subsequent plating. Firing after implantation is performed by halogen lamp illumination pulses. Process is performed with crystals which doping concentration is N = 10¹³-10¹⁶ сm^-3. Firing is done for 0.8-10 seconds with power density 50-100 W/cm²,, energy of beryllium ions for implantation is 20-100 keV and their amount is Φ = 5•10¹¹- 6•10¹⁴ cm^-2. Amount and concentration of doping satisfy to condition Φ≥ 5•10^-2N. EFFECT: increased functional capabilities. 1 tbl