FIELD: treatment of metals. SUBSTANCE: surface of quartz backing with optical mirror applied to it is covered with thin silicon oxide film, one interference layer thick, over area equal to area of flat side of backing with mirror by n-fold crossing of plasma flux with backing with mirror. Flux contains silicon-organic substance in vaporous state. Velocity of mutual crossing lies within interval 2.5-3.0 m/s when nn ≥ 11. EFFECT: improved efficiency of treatment.
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