METHOD OF RECRYSTALLIZATION OF FILMS OF HIGH-MELTING OXIDES Russian patent published in 1995 - IPC

Abstract RU 2032961 C1

FIELD: obtaining insulating layers. SUBSTANCE: sublayer with the film is affected by low-temperature plasma of atmospheric pressure. Power, gas flow rate, and duration of exposure of the sublayer with film to the flow are defined by relationships presented in the invention description. EFFECT: improved quality of films. cl, dwg

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RU 2 032 961 C1

Authors

Knjazev I.V.

Pavlov G.Ja.

Vybornova L.N.

Dates

1995-04-10Published

1990-02-27Filed