FIELD: electronic engineering. SUBSTANCE: reactor uses capacitor-loaded quarter-wave resonator circuit set up of mounting table and counterelectrode fixed on end of central rod. High concentration of chemically active particles is created within charge gap formed by counterelectrode and table. Proposed reactor is effective in forming slits in silicon substrates of insulation and depositing insulation films in multilevel connections of integrated circuits. Diameter of rod equals that of table and greater than diameter of substrate being treated; distance between mounting table and end of rod is smaller than between case and rod. EFFECT: improved uniformity of plasma action on treated surface. 1 dwg
